features xbright led technology larger power chip design high performance 35 mw min. (460 nm) blue 30 mw min. (470 nm) blue 20 mw min. (505 nm) traffc green 15 mw min. (527 nm) green single wire bond structure ausn backside metal ? ? ? C C C C ? ? applications general illumination automobile aircraft decorative lighting task lighting outdoor illumination white leds crosswalk signals backlighting ? C C C C C ? ? ? xbright ? power chip led c xxx xb500-s xx 00-a crees xb? power chip series of leds are the next generation of solid-state led emitters that combine highly effcient ingan materials with crees proprietary g?sic? substrate to deliver superior price/performance for high-intensity leds. these led chips have a geometrically enhanced epi-down design to maximize light extraction effciency and require only a single wire bond connection. these leds are useful in a broad range of applications such as outdoor full-motion led video signs, automotive lighting and white leds. crees xb power chips are compatible with optical power packages that employ proper thermal management. d a t a s h e e t : c p r 3 c s , r e v . a c xxx xb500-s xx 00-a chip diagram top view bottom view g?sic led chip 500 x 500 m sic substrate 376 m contact metal h = 250 m bond pad 120 m diameter die cross section cathode (-) ingan anode (+) subject to change without notice. www.cree.com
copyright ? 2005-2006 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo, g?sic and xbright are registered trademarks, and xb and xb500 are trademarks of cree, inc. cpr3cs rev. b cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com maximum ratings at t a = 5c note c xxx xb500-s x x00-a dc forward current 150ma note 2 peak forward current (1/10 duty cycle @ 1khz) 200ma led junction temperature 125c reverse voltage 5 v operating temperature range -40c to +85c storage temperature range -40c to +100c electrostatic discharge threshold (hbm) note 3 1000v electrostatic discharge classifcation (mil-std-883e) note 3 class 2 typical electrical/optical characteristics at t a = 5c, if = 5ma note part number forward voltage (v f , v) reverse current [i(vr=5v), a] full width half max ( d , nm) min. typ. max. max. typ. c460xb500-s3500-a 3.0 3.5 4.0 2 21 c470xb500-s3000-a 3.0 3.5 4.0 2 22 c505xb500-s2000-a 3.0 3.5 4.0 2 30 c527xb500-s1500-a 3.0 3.5 4.0 2 35 mechanical specifcations c xxx xb500-s000-a description dimension tolerance p-n junction area (m) 448 x 448 25 top area (m) 325 x 325 25 bottom area (m) 500 x 500 50 chip thickness (m) 250 25 au bond pad diameter (m) 120 10 au bond pad thickness (m) 1.2 0.5 back contact metal area (m) 376 x 376 25 back contact metal options/thickness (m) 1.7 0.3 notes: maximum ratings are package dependent. the above ratings were determined using a au-plated to39 header without an encapsulant for characterization. ratings for other packages may differ. the junction temperature should be characterized in a specifc package to determine limitations. assembly processing temperature must not exceed 325c (< 5 seconds). all products conform to the listed minimum and maximum specifcations for electrical and optical characteristics when assembled and operated at 125 ma within the maximum ratings shown above. effciency decreases at higher currents. typical values given are within the range of average expected by manufacturer in large quantities and are provided for information only. all measurements were made using a au-plated to39 header without an encapsulant. optical characteristics measured in an integrating sphere using illuminance e. product resistance to electrostatic discharge (esd) according to the hbm is measured by simulating esd using a rapid avalanche energy test (raet). the raet procedures are designed to approximate the maximum esd ratings shown. the raet procedure is performed on each die. the esd classifcation of class 2 is based on sample testing according to mil -std-883e. back contact metal is 80%/20% au/sn by weight, with target eutectic melting temperature of approximately 282c. caution: to avoid leakage currents and achieve maximum output effciency, die attach material must not contact the side of the chip. xb500? chips are shipped with the junction side up, requiring die transfer prior to die attach. specifcations are subject to change without notice. 1. 2. 3. 4. 5. 6. 7.
copyright ? 2005-2006 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo, g?sic and xbright are registered trademarks, and xb and xb500 are trademarks of cree, inc. 3 cpr3cs rev. b cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com standard bins for c xxx xb500-s xx 00-a led chips are sorted to the radiant fux and dominant wavelength bins shown. a sorted die sheet contains die from only one bin. sorted die kit (c xxx xb500-s xx 00-a) orders may be flled with any or all bins (c xxx xb500-02 xx -a) contained in the kit. all radiant fux and all dominant wavelength values shown and specifed are at if = 125 ma. radiant fux values are measured using au-plated to39 headers without an encapsulant. c460xb500-s3500-a c460xb500-0205-a c460xb500-0206-a c460xb500-0207-a c460xb500-0208-a c460xb500-0201-a c460xb500-0202-a c460xb500-0203-a c460xb500-0204-a 455 nm 457.5 nm 460 nm 462.5 nm 465 nm 55.0 mw 35.0 mw dominant wavelength radiant flux c470xb500-s3000-a c470xb500-0205-a c470xb500-0206-a c470xb500-0207-a c470xb500-0208-a c470xb500-0201-a c470xb500-0202-a c470xb500-0203-a c470xb500-0204-a 465 nm 467.5 nm 470 nm 472.5 nm 475 nm 38.0 mw 30.0 mw dominant wavelength radiant flux c57xb500-s500-a c527xb500-0207-a c527xb500-0208-a c527xb500-0209-a c527xb500-0204-a c527xb500-0205-a c527xb500-0206-a c527xb500-0201-a c527xb500-0202-a c527xb500-0203-a 520 nm 525 nm 530 nm 535 nm 24.0 mw 19.0 mw 15.0 mw dominant wavelength radiant flux c505xb500-s000-a c505xb500-0203-a c505xb500-0204-a c505xb500-0201-a c505xb500-0202-a 500 nm 505 nm 510 nm 26.0 mw 20.0 mw dominant wavelength radiant flux
copyright ? 2005-2006 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo, g?sic and xbright are registered trademarks, and xb and xb500 are trademarks of cree, inc. 4 cpr3cs rev. b cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com characteristic curves, t a = 25?c forward current vs forward voltage 0 20 40 60 80 100 120 140 160 0 0.5 1 1.5 2 2.5 3 3.5 4 forward voltage (v) forward current (ma) relative intensity vs forward current 0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 160 forward current (ma) % intensity dominant wavelength shift vs forward current -2 -1 0 1 2 3 4 5 6 7 8 9 0 20 40 60 80 100 120 140 160 forward current (ma) dominant wavelength shift (nm) 470nm 527nm
|
